AIXTRON reported that the company will deliver its AIX G5+ C MOCVD systems to China-based InnoScience Technology for the development of GaN power devices.
InnoScience Technology has ordered multiple MOCVD systems from AIXTRON to expand its production of GaN-on-Si devices for various applications. GaN power devices are used for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching.

(Image: AIXTRON)

In the scope of the increasing number of applications, AIXTRONs AIX G5+ C platform offers scalable process, tight uniformity and particle control of the epitaxial wafers to enable high yield.
Jay Son, CEO of InnoScience Technology, said, "We have chosen the AIX G5+ C as it has proven to provide excellent thickness and wafer uniformity due to the superior capabilities of the Planetary® batch reactor concept. The newly acquired systems will enable us to ramp up manufacturing of our high-end products such as 650V GaN-on-Si devices with the best cost per wafer in the market."
"Market demand for power electronics, especially for GaN-based devices is picking up speed with AIXTRON having the most capable system available in the market. We are pleased that InnoScience leads the way in China and has decided to select this system which convinces not only by performance but also by making the production of GaN power devices commercially viable," commented Dr. Felix Grawert, President of AIXTRON.